Video Lectures on "VLSI Devices : Modeling and Simulation" by Prof. S.K. Lahiri sir, IIT KGP

Video Lecture Series from IIT Professors :

VLSI Devices : Modeling and Simulation by Prof. S.K. Lahiri sir

Samir K. Lahiri obtained M.Tech. and Ph.D. in Radio Physics and Electronics from the University of Calcutta in the years 1966 and 1971 respectively. He joined the faculty of Indian Institute of Technology Kharagpur in the  Department of Electronics & Electrical Communication Engineering in November 1971. Since then he served I.I.T. Kharagpur in various capacities: He became Professor in 1985, Co-ordinator – Microelectronics Centre in 1989, Dean – Sponsored Research and Industrial Consultancy (1997 – 2000), Chairman – Advanced Technology Centre in 1998, and the Deputy Director of the Institute during 2002 – 2005.. He took active role in the development and expansion of teaching and research programmes in microelectronics/VLSI, semiconductor devices, microelectromechanical sensors (MEMS), integrated optics and surface-acoustic-wave (SAW) devices. He has led research groups in challenging R & D activities in the above areas, sponsored by various agencies, which resulted in development of silicon linear bipolar ASICs, ECL gate chips, MEMS such as silicon micromachined thermal detectors, accelerometers, quartz micromachined gyro-chips and DETF accelerometer chips, integrated-optic waveguides and components, special SAW filters, etc. He also played the key role in setting up the Advanced VLSI Design Laboratory, Space Technology Cell and MEMS Design Laboratory in IIT Kharagpur. He has supervised 12 Ph. D. theses and authored about 150 research papers. He was the Secretary, Vice-President and President of IEEE Kharagpur Section in the early 1990s. He serves in various National Level Committees on Smart Materials & Structures, Nanotechnology and VLSI Design and is in the Research Council of CSIO Chandigarh and in various national level committees of ISRO, DRDO, CSIR, NPSM, DSIR, DIT/MCIT and other organisations. He is a Fellow of Indian National
Academy of Engineering.

 



Video  Lectures on "VLSI Devices and Model" by Prof.  S.K. Lahiri sir, IIT KGP

1.  Semiconductor Materials and Structures

2. Semiconductor Band Structures

3. Electron and holes Statistics

4. Carrier Mobility and Conductivity

5. Carrier diffusion, generation/recombination, high-field effect

6. Avalanche Multiplication, Hall Effect

7. p-n junction formation, built-in potential

8. Quasi Fermi levels, p-n electrostatics

9. Abrupt and linearly graded p-n junction depletion layers and capacitance

10. Current - Voltage relation in p-n junction - I

11. Current - Voltage relation in p-n junction - II

12. Generation / recombination currents, diffusion capacitance

13. Diodes equivalent circuit, Breakdown voltage

14. Junction curvature effect, transient behaviour, noise

15. Tunnel diode, metal-semiconductor junctions

16. Schottky diodes, Ohmic contacts

17. Heterojunctions

18. Bipolar Junction Transistor, current-voltage relations

19. Current gain in BJT

20. Bandgap narrowing, Auger recombination, Early effect & punch-through in BJT

21. Breakdown voltage in BJT, small-signal equivalent circuit

22. Cut-off frequency of BJT, switching behaviour, HBT

23. HBT, SCR, JEFT

24. MOS devices classification, basic concepts of MOS field effect

25. Induced surface charge in MOS, accumulation, depletion & inversion layers

26. Capacitance-voltage characteristics, threshold voltage of MOS capacitor

27. Flat-Band voltage

28. Gate oxide charges, interface states, streching of CV plots

29. Transport through gate oxide, MOSFET

30. Current-voltage relation of long-channel MOSFETs

31. Drain conductance, transconductance, effect of drain-included channel depletion

32. Accurate model of drain current saturation, body effect

33. Drift-diffusion model, subthreshold conduction

34. Subthreshold slope, mobility model in MOSFETs

35. Temperature effect, equivalent circuit of MOSFET, threshold voltage control

36. Channel implantation, Substrate bias sensitivity

37. Scaling of MOSFETs, Short-channel effects

38. Charge sharing model

39. Narrow width effect, channel length modulation, hot carrier effects

40. MOSFET fabrication, self-aligned silicide technology., LDD MOSFET

41. VMOS, FAMOS, EEPROM

42. Oxide isolate CMOS, control of latch-up,  Silicon On Insulator (SOI)

43. Charge Coupled Devices (CCD)

44. MESFET, Permeable base transistor

45. Advanced high-speed devices, MOSFET, Quantum devices

46. Level 1 model of MOSFET - I

47. Level 1 model of MOSFET - II

48. Level 2 model of MOSFET - I ; mobility modelling, subthreshold current, channel length modulation

49. Level 2 model of MOSFET - II ; short channel effect, velocity saturation

50. Level 2 model of MOSFET - III ; narrow width effect, gate capacitance

51. Level 2 model of MOSFET - IV ; junction  capacitances

52. Level 3 model of MOSFET ; slope discontinuity, gate capacitances, BSIM model

53. BJT models : Basic Ebers-Moll model, basic Gummel-Poon model

54. Model derivation

55. Moll-Ross equation, high injection effect